RELATION BETWEEN DIFFUSIVITY-MOBILITY RATIO AND LINEWIDTH OF SPONTANEOUS EMISSION IN DEGENERATE SEMICONDUCTORS AT RELATIVELY HIGH-TEMPERATURES

被引：1

作者：

CHAKRAVARTI, AN ^{[1
]}

PARUI, DP ^{[1
]}

机构：

[1] UNIV COLL SCI & TECHNOL CALCUTTA, INST RADIO PHYS & ELECTR, 92 ACHARYA PRAFULLACHANDRA RD, CALCUTTA 9, INDIA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1973年 / 35卷 / 04期

关键词：

D O I：

10.1080/00207217308938577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：573 / 576

页数：4

共 10 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J].

CASEY, HC ;

KAISER, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :149-+

[3] DOPING DEPENDENCE OF LINEWIDTH OF SPONTANEOUS EMISSION IN GAAS LASER DIODES [J].

CHAKRAVARTI, AN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (03) :287-+

[4] THEORY OF EFFECT OF STRAIN ON GAAS ELECTROLUMINESCENT DIODES [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1408-&

[5]

GOOCH CH, 1969, GALLIUM ARSENIDE LAS

[6] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J].

KONNERTH, K ;

LANZA, C .

APPLIED PHYSICS LETTERS, 1964, 4 (07) :120-&

[7] ON THE DIFFUSION THEORY OF RECTIFICATION [J].

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 213 (1113) :226-237

[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[9] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

LINDHOLM, FA ;

AYERS, RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :371-&

[10]

SPENKE E, 1958, ELECTRONIC SEMICONDU

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