GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS

被引：63

作者：

LINDHOLM, FA

AYERS, RW

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 03期

关键词：

D O I：

10.1109/PROC.1968.6320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：371 / &

共 11 条

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[2]

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[3]

BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE, P65

[4] PROPERTIES OF SILICON AND GERMANIUM .2. [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300

Einstein, A .

[6]

HACHTEL GD, 1967, OCT IEEE INT EL DEV

[7] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J].

KAMINS, TI ;

MULLER, RS .

LADE, RW .

[9]

SCHROEDER JE, 1967, OCT IEEE INT EL DEV

[10]

SPENKE E, 1958, ELECTRONIC SEMICONDU, P293