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STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS
被引:64
作者
:
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
MULLER, RS
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1967年
/ 10卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(67)90040-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:423 / &
相关论文
共 6 条
[1]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[2]
CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
论文数:
0
引用数:
0
h-index:
0
KINGSTON, RH
NEUSTADTER, SF
论文数:
0
引用数:
0
h-index:
0
NEUSTADTER, SF
[J].
JOURNAL OF APPLIED PHYSICS,
1955,
26
(06)
: 718
-
720
[3]
ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(05)
: 248
-
+
[4]
MCDOUGALL J, 1938, T ROY SOC LONDON, VA237, P67
[5]
SPACE CHARGE CALCUATIONS FOR SEMICONDUCTORS
SEIWATZ, R
论文数:
0
引用数:
0
h-index:
0
SEIWATZ, R
GREEN, M
论文数:
0
引用数:
0
h-index:
0
GREEN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1958,
29
(07)
: 1034
-
1040
[6]
ELECTRON MOBILITY STUDIES IN SURFACE SPACE-CHARGE LAYERS IN VAPOR-DEPOSITED CDS FILMS
WAXMAN, A
论文数:
0
引用数:
0
h-index:
0
WAXMAN, A
HENRICH, VE
论文数:
0
引用数:
0
h-index:
0
HENRICH, VE
SHALLCROSS, FV
论文数:
0
引用数:
0
h-index:
0
SHALLCROSS, FV
BORKAN, H
论文数:
0
引用数:
0
h-index:
0
BORKAN, H
WEIMER, PK
论文数:
0
引用数:
0
h-index:
0
WEIMER, PK
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(01)
: 168
-
+
←
1
→
共 6 条
[1]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[2]
CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
论文数:
0
引用数:
0
h-index:
0
KINGSTON, RH
NEUSTADTER, SF
论文数:
0
引用数:
0
h-index:
0
NEUSTADTER, SF
[J].
JOURNAL OF APPLIED PHYSICS,
1955,
26
(06)
: 718
-
720
[3]
ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(05)
: 248
-
+
[4]
MCDOUGALL J, 1938, T ROY SOC LONDON, VA237, P67
[5]
SPACE CHARGE CALCUATIONS FOR SEMICONDUCTORS
SEIWATZ, R
论文数:
0
引用数:
0
h-index:
0
SEIWATZ, R
GREEN, M
论文数:
0
引用数:
0
h-index:
0
GREEN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1958,
29
(07)
: 1034
-
1040
[6]
ELECTRON MOBILITY STUDIES IN SURFACE SPACE-CHARGE LAYERS IN VAPOR-DEPOSITED CDS FILMS
WAXMAN, A
论文数:
0
引用数:
0
h-index:
0
WAXMAN, A
HENRICH, VE
论文数:
0
引用数:
0
h-index:
0
HENRICH, VE
SHALLCROSS, FV
论文数:
0
引用数:
0
h-index:
0
SHALLCROSS, FV
BORKAN, H
论文数:
0
引用数:
0
h-index:
0
BORKAN, H
WEIMER, PK
论文数:
0
引用数:
0
h-index:
0
WEIMER, PK
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(01)
: 168
-
+
←
1
→