DOPING DEPENDENCE OF LINEWIDTH OF SPONTANEOUS EMISSION IN GAAS LASER DIODES

被引：5

作者：

CHAKRAVARTI, AN

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 03期

关键词：

D O I：

10.1080/00207216808938022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：287 / +

页数：1

共 15 条

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[3] TEMPERATURE DEPENDENCE OF LINEWIDTH OF SPONTANEOUS EMISSION IN EPITAXIAL LASER DIODES [J].

CHAKRAVARTI, AN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (02) :197-+

[4]

CHAKRAVARTI AN, 1968, INDIAN J PURE AP PHY, V6, P47

[5]

CHAKRAVARTI AN, TO BE PUBLISHED

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

DOUSMANIS, GC ;

STAEBLER, DL ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&

[7] BAND-FILLING MODEL FOR INJECTION LUMINESCIENCE AT HIGHER TEMPERATURES [J].

ELISEEV, PG ;

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MANKO, MA ;

PINSKER, IZ .

PHYSICA STATUS SOLIDI, 1967, 23 (02) :587-+

[8] THEORY OF EFFECT OF STRAIN ON GAAS ELECTROLUMINESCENT DIODES [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1408-&

[9]

KELLEY PL, 1966, PHYSICS QUANTUM E ED, P467

[10]

LUCOVSKY G, 1966, PHYSICS QUANTUM ELEC, P467

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