TEMPERATURE DEPENDENCE OF LINEWIDTH OF SPONTANEOUS EMISSION IN EPITAXIAL LASER DIODES

被引：1

作者：

CHAKRAVARTI, AN

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 02期

关键词：

D O I：

10.1080/00207216808938010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：197 / +

页数：1

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[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

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