BAND-FILLING MODEL FOR INJECTION LUMINESCIENCE AT HIGHER TEMPERATURES

被引:16
作者
ELISEEV, PG
KRASILNIKOV, AI
MANKO, MA
PINSKER, IZ
机构
来源
PHYSICA STATUS SOLIDI | 1967年 / 23卷 / 02期
关键词
D O I
10.1002/pssb.19670230218
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:587 / +
页数:1
相关论文
共 8 条
[1]  
BAGAEV VS, 1965, RADIATIVE RECOMBINAT, P149
[2]  
ELISEEV PG, TO BE PUBLISHED
[3]   SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].
LASHER, G ;
STERN, F .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&
[4]  
LAX M, 1966, J PHYS SOC JAPAN S21, P218
[5]   RECOMBINATION RADIATION IN GAAS [J].
NATHAN, MI ;
BURNS, G .
PHYSICAL REVIEW, 1963, 129 (01) :125-&
[6]   BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].
NELSON, DF ;
GERSHENZON, M ;
ASHKIN, A .
APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184
[7]  
PANKOVE JI, 1965, RADIATIVE RECOMBINAT, P201
[8]   EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].
PILKUHN, M ;
RUPPRECHT, H ;
BLUM, S .
SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909