DETERMINATION OF DIFFUSIVITY-MOBILITY RATIO IN DEGENERATE SEMICONDUCTORS FROM LINEWIDTH MEASUREMENTS IN LASER-DIODES

被引：1

作者：

CHAKRAVARTI, AN ^{[1
]}

PARUI, DP ^{[1
]}

机构：

[1] UNIV COLL SCI & TECHNOL CALCUTTA, INST RADIO PHYS & ELECTR, CALCUTTA 9, INDIA

来源：

关键词：

D O I：

10.1007/BF01593832

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：548 / 550

页数：3

共 6 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2]

BLAKEMORE JS, 1966, PHYS REV, V148, P83

CHAKRAVARTI, AN .

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[5] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

LINDHOLM, FA ;

AYERS, RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :371-&

[6] RECOMBINATION EMISSION IN INSB [J].

MOORADIA.A ;

FAN, HY .

PHYSICAL REVIEW, 1966, 148 (02) :873-&