EFFECT OF DONOR IMPURITIES ON THE CONDUCTION AND VALENCE BANDS OF SILICON

被引：28

作者：

LOWNEY, JR

BENNETT, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：433 / 438

页数：6

共 14 条

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[3]

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[8] DISAPPEARANCE OF IMPURITY LEVELS IN SILICON AND GERMANIUM DUE TO SCREENING [J].

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[9]

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