EVIDENCE OF BANDGAP-NARROWING IN THE SPACE-CHARGE LAYER OF HEAVILY DOPED SILICON DIODES

被引：6

作者：

LOWNEY, JR

THURBER, WR

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 03期

关键词：

D O I：

10.1049/el:19840096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：142 / 143

页数：2

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