TRANSPORT-EQUATIONS FOR THE ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR-DEVICES

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] ADLER MS, 1978, TECH DIG, P550

[3] ADLER MS, 1979, P NASECODE I C, P3

[4] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION [J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 311 - 319

[7] SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 67 - 70

[8] Kroemer H., 1957, RCA REV, V18, P332

[9] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[10] LAWERS P, 1978, SOLID ST ELECTRON, V21, P747

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] ADLER MS, 1978, TECH DIG, P550

[3] ADLER MS, 1979, P NASECODE I C, P3

[4] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION [J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 311 - 319

[7] SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 67 - 70

[8] Kroemer H., 1957, RCA REV, V18, P332

[9] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[10] LAWERS P, 1978, SOLID ST ELECTRON, V21, P747