MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION

被引：16

作者：

KENNEDY, DP ^{[1
]}

机构：

[1] UNIV FLORIDA,CTR ELECTRON DEVICE RES,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

关键词：

D O I：

10.1016/0038-1101(77)90114-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：311 / 319

页数：9

共 22 条

[1] ADIROVICH EI, 1958, SOV PHYS-TECH PHYS, V3, P49
[2] CAPACITANCE OF P-N JUNCTIONS - SPACE-CHARGE CAPACITANCE
CHANG, YF
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2337 - &
[3] CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281
[4] SPATIAL VARIATION OF QUASI-FERMI POTENTIALS IN REVERSE-BIASED P+-N JUNCTIONS AND ITS IMPLICATIONS IN TRANSITION REGION CAPACITANCE CALCULATIONS
CSERVENY, SI
BULUCEA, CD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 220 - +
[5] GHANDI SK, 1967, THEORY PRACTICE MICR
[6] GRAY PE, 1964, PHYSICAL ELECTRONICS
[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS
GUMMEL, HK
SCHARFET.DL
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2148 - &
[9] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[10] HARTEN HU, 1953, Z PHYS, V138, P336