MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION

被引：16

作者：

KENNEDY, DP ^{[1
]}

机构：

[1] UNIV FLORIDA,CTR ELECTRON DEVICE RES,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

关键词：

D O I：

10.1016/0038-1101(77)90114-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：311 / 319

页数：9

共 22 条

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[19] Sparkes JJ, 1964, J ELECTRON CONTR, V16, P153
[20] SZE SM, 1969, PHYSICS SEMICONDUCTO