CAPACITANCE MEASUREMENTS ON ALLOYED INDIUM-GERMANIUM JUNCTION DIODES

被引：16

作者：

MUSS, DR

机构：

来源：

关键词：

D O I：

10.1063/1.1721941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1514 / 1517

页数：4

共 9 条

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KOCH, W
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SCHULTZ, W
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[3] SILICON P-N-JUNCTION ALLOY DIODES
PEARSON, GL
SAWYER, B
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[J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687
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[7] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1715 - 1720
[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[9] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427