DEPENDENCE OF PEAK CURRENT DENSITY ON ACCEPTOR CONCENTRATION IN GERMANIUM TUNNEL DIODES

被引：19

作者：

BUTCHER, PN

HULME, KF

MORGAN, JR

机构：

来源：

SOLID-STATE ELECTRONICS | 1962年 / 5卷 / SEP-O期

关键词：

D O I：

10.1016/0038-1101(62)90119-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：358 / &

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[1] CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .2. EXPERIMENTAL - GALLIUM-DOPED GERMANIUM
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