DEPENDENCE OF PEAK CURRENT DENSITY ON ACCEPTOR CONCENTRATION IN GERMANIUM TUNNEL DIODES

被引：19

作者：

BUTCHER, PN

HULME, KF

MORGAN, JR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(62)90119-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：358 / &

共 16 条

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[12] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665
[13] KELDYSH LV, 1957, J EXP THEOR PHYS, V33, P873
[14] MEYERHOFER D, UNPUB PHYS REV
[15] ORIENTATION-DEPENDENT DISTRIBUTION COEFFICIENTS IN MELT-GROWN INSB CRYSTALS
MULLIN, JB
HULME, KF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 17 (1-2) : 1 - &
[16] RESISTIVITIES AND HOLE MOBILITIES IN VERY HEAVILY DOPED GERMANIUM
TRUMBORE, FA
TARTAGLIA, AA
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1511 - 1511