FABRICATION AND CHARACTERIZATION OF EPITAXIAL HEAVILY PHOSPHORUS-DOPED SILICON

被引：11

作者：

DELALAMO, JA

SWANSON, RM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113713

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3011 / 3016

页数：6

共 29 条

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