MEASUREMENT OF ELECTRON-MOBILITY IN EPITAXIAL HEAVILY-PHOSPHORUS-DOPED SILICON

被引：10

作者：

DELALAMO, JA

SWANSON, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

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D O I：

10.1063/1.334258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2250 / 2252

页数：3

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共 18 条

[1] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON
BACCARANI, G
OSTOJA, P
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580
[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[3] DELALAMO J, 1984, 9TH INT C CHEM VAP D, P295
[4] DUTTON RW, 1983, 1982 P S SI PROC, P407
[5] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118
[6] BETWEEN CARRIER DISTRIBUTIONS AND DOPANT ATOMIC DISTRIBUTION IN BEVELED SILICON SUBSTRATES
HU, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1499 - 1510
[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[8] IRVIN JC, 1979, CURRENT CONTENTS ENG, V10, P22
[9] RELATIONSHIP BETWEEN CARRIER MOBILITY AND ELECTRON-CONCENTRATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS
MASETTI, G
SOLMI, S
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (03): : 65 - 68
[10] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON
MASETTI, G
SEVERI, M
SOLMI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769