NEW PROGRESS IN THE DEVELOPMENT OF A 94-GHZ PRETUNED MODULE SILICON IMPATT DIODE

被引:11
作者
HEITZMANN, M
BOUDOT, M
机构
关键词
D O I
10.1109/T-ED.1983.21206
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:759 / 763
页数:5
相关论文
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[2]  
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GOKGOR HS, 1981, ELECTRON LETT, V17
[4]   MILLIMETER-WAVE CW IMPATT DIODES AND OSCILLATORS [J].
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