MILLIMETER-WAVE CW IMPATT DIODES AND OSCILLATORS

被引：78

作者：

MIDFORD, TA ^{[1
]}

BERNICK, RL ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO, CULVER CITY, CA 90230 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 05期

关键词：

D O I：

10.1109/TMTT.1979.1129653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper summarizes the current state of the art of silicon CW millimeter-wave IMPATT diodes and oscillators in the frequency range from 30 to 250 GHz. Design procedures, fabrication, and packaging technology are reviewed, and the current performance of diode oscillators is reported. A brief account of present device reliability is also presented. The contrast between maturing device technology below 100 GHz and largely laboratory-based technology at higher frequencies is discussed. Finally, a prognosis of Future developments is offered. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：483 / 492

页数：10

共 21 条

[1]

BAYUK FJ, 1977 IEEE INT MICR S, P29

[2] FREQUENCY SCALING OF IMPATT DIODES [J].