THERMAL PROPERTIES OF ANNULAR AND ARRAY GEOMETRY SEMICONDUCTOR-DEVICES ON COMPOSITE HEAT SINKS

被引：15

作者：

BOARD, K ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(73)90044-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1315 / 1320

页数：6

共 11 条

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[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI
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[4] DECKER DR, 1970, IEEE T ELECTRON DEVI, VED17, P739
[5] FREY J, 1972, IEEE T ELECTRON DEVI, VED19, P981
[6] TEMPERATURE AND CURRENT DISTRIBUTION IN AN AVALANCHING P-N JUNCTION
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MISAWA, T
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1007 - &
[7] KLOZENBERG JP, PRIVATE COMMUNICATIO
[8] RILEY TJ, 1968, 2 P INT S GAAS I PHY, V173
[9] EMBEDDED DIAMOND HEAT SINKS FOR AVALANCHE-DIODES
RUSSELL, EM
THOMSON, I
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (08): : 1014 - &
[10] IMPORTANCE OF PROVIDING A GOOD HEAT SINK FOR AVALANCHING TRANSIT TIME OSCILLATOR DIODES
SWAN, CB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03): : 451 - &