TEMPERATURE AND CURRENT DISTRIBUTION IN AN AVALANCHING P-N JUNCTION

[1] GUMMEL HK, 1967, IEEE T, VED14, P569

[2] HEIN VL, UNPUBLISHED WORK

[3] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497

[4] MARINACCIO LP, TO BE PUBLISHED

[5] McCracken D.D., 1964, NUMERICAL METHODS FO

[6] MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 580 - +

[7] IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02): : 223 - +

[1] GUMMEL HK, 1967, IEEE T, VED14, P569

[2] HEIN VL, UNPUBLISHED WORK

[3] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497

[4] MARINACCIO LP, TO BE PUBLISHED

[5] McCracken D.D., 1964, NUMERICAL METHODS FO

[6] MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 580 - +

[7] IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02): : 223 - +