IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE

被引：21

作者：

RULISON, RL

GIBBONS, G

JOSENHANS, JG

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 02期

关键词：

D O I：

10.1109/PROC.1967.5449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：223 / +

页数：1

共 6 条

[1] AVALANCHE TRANSIT-TIME MICROWAVE OSCILLATORS AND AMPLIFIERS
DELOACH, BC
JOHNSTON, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 181 - &
[2] GAAS AVALANCHE MICROWAVE OSCILLATORS
IRVIN, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 208 - +
[3] A SILICON DIODE MICROWAVE OSCILLATOR
JOHNSTON, RL
DELOACH, BC
COHEN, BG
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02): : 369 - +
[4] IMPROVED PERFORMANCE OF MICROWAVE READ DIODES
JOHNSTON, RL
JOSENHANS, JG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (03): : 412 - +
[5] NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS
JOSENHANS, J
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1478 - +
[6] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446