Y-BAND (170-260 GHZ)TUNABLE CW IMPATT DIODE OSCILLATORS

被引：17

作者：

CHAO, C

BERNICK, RL

NAKAJI, EM

YING, RS

WELLER, KP

LEE, DH

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1977年 / 25卷 / 12期

关键词：

D O I：

10.1109/TMTT.1977.1129261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：985 / 991

页数：7

共 22 条

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Goedbloed J. J., 1974, 4th European Microwave Conference, P328, DOI 10.1109/EUMA.1974.332066

[9] IMPATT DIODE CIRCUIT-DESIGN FOR PARAMETRIC STABILITY [J].

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[10] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].

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