IMPATT DIODE CIRCUIT-DESIGN FOR PARAMETRIC STABILITY

被引：10

作者：

GONDA, J

SCHROEDER, WE

机构：

[1] BELL TEL LABS INC, DEPT SINGLE SIDE BAND MICROWAVE RADIO, N ANDOVER, MA 01845 USA

[2] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1977年 / 25卷 / 05期

关键词：

D O I：

10.1109/TMTT.1977.1129102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：343 / 352

页数：10

共 11 条

[1] ELIMINATION OF TUNING-INDUCED BURNOUT AND BIAS-CIRCUIT OSCILLATIONS IN IMPATT OSCILLATORS [J].

BRACKETT, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (03) :271-306

[2] LARGE-SIGNAL SILICON AND GERMANIUM AVALANCHE-DIODE CHARACTERISTICS [J].

DECKER, DR ;

DUNN, CN ;

FRANK, RL .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :872-&

[3]

Goedbloed J. J., 1974, 4th European Microwave Conference, P328, DOI 10.1109/EUMA.1974.332066

[4] INVESTIGATION OF PARASITIC OSCILLATIONS IN IMPATT-DIODE OSCILLATORS BY A SIMPLE LOCUS CHART [J].

GOEDBLOED, JJ .

ELECTRONICS LETTERS, 1975, 11 (03) :54-56

[5]

HARKLESS ET, 1970, Patent No. 3534293

[6] LARGE-SIGNAL NOISE, FREQUENCY CONVERSION, AND PARAMETRIC INSTABILITIES IN IMPATT DIODE NETWORKS [J].

HINES, ME .

PROCEEDINGS OF THE IEEE, 1972, 60 (12) :1534-1548

[7]

KUO YL, 1975, 1975 IEEE INT S CIRC

[8]

KUVAS RL, COMMUNICATION

[9] CIRCUIT CONDITIONS TO PREVENT SECOND-SUBHARMONIC POWER EXTRACTION IN PERIODICALLY DRIVEN IMPATT DIODE NETWORKS [J].

PETERSON, DF .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (08) :784-790

[10] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

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