EQUILIBRIUM AND KINETICS IN CHEMICAL VAPOR-DEPOSITION OF SILICON

被引：17

作者：

BLOEM, J ^{[1
]}

机构：

[1] UNIV NIJMEGEN,DEPT SOLID STATE CHEM,LAB PHYS,TOERNOOIVELD,NIJMEGEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90139-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：256 / 263

页数：8

共 24 条

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[4] POSITION OF SURFACE FERMI LEVEL OF SILICON AT 1350-1500K [J].

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[5]

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[7]

CHAPMAN S, 1952, MATHEMATICAL THEORY

[8] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

EVERSTEYN, FC ;

SEVERIN, PJW ;

BREKEL, CHJV ;

PEEK, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :925-+

[9]

GILLING LJ, 1975, J CRYST GROWTH, V31, P317

[10]

Grew K. E., 1952, THERMODIFFUSION GASE

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