POSITION OF SURFACE FERMI LEVEL OF SILICON AT 1350-1500K

被引：2

作者：

BLOEM, J ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,PHYS LAB,NIJMEGEN,NETHERLANDS

来源：

关键词：

D O I：

10.1016/0038-1098(73)90588-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：269 / 271

页数：3

共 7 条

[1]

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[2]

Casey H. C. Jr., 1972, Journal of Crystal Growth, V13-14, P818, DOI 10.1016/0022-0248(72)90566-0

CASEY, HC ;

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[4]

HALL RN, 1962, PHYS REV, V88, P139

[5] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[6] DOPING OF EPITAXIAL SILICON - BEHAVIOR OF SOLID SOLUTIONS [J].

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[7] POINT DEFECT TRAPPING IN CRYSTAL GROWTH [J].

WEBB, WW .