INHERENT AND STRESS-INDUCED LEAKAGE IN HEAVILY DOPED SILICON JUNCTIONS

被引：44

作者：

HACKBARTH, E

TANG, DD

机构：

[1] IBM T J Watson Research Cent,, Yorktown Heights, NY, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2108 / 2118

页数：11

共 18 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :89-95

[9] TUNNELING TO TRAPS IN INSULATORS [J].

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