AN ADVANCED HIGH-PERFORMANCE TRENCH-ISOLATED SELF-ALIGNED BIPOLAR TECHNOLOGY

被引：28

作者：

LI, GP

NING, TH

CHUANG, CT

KETCHEN, MB

TANG, DDL

MAUER, J

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,BIOPOLAR DEVICES & CIRCUIT GRP,YORKTOWN HTS,NY 10598

[2] IBM CORP,THOMAS J WATSON RES CTR,SILICON MICROFABRICAT FACIL,YORKTOWN HTS,NY 10598

[3] IBM CORP,THOMAS J WATSON RES CTR,RES STAFF,YORKTOWN HTS,NY 10598

[4] IBM CORP,THOMAS J WATSON RES CTR,BIPOLAR VLSI DESIGN GRP,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2246 / 2254

页数：9

共 28 条

[1]

CHAN YH, 1986, ISSCC, P210

[2] A 1.0-NS 5-KBIT ECL RAM [J].

CHUANG, CT ;

TANG, DD ;

LI, GP ;

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BOEDEKER, RR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :670-674

[3]

CHUANG CT, 1986, IEEE ELECTR DEVICE L, V7, P564, DOI 10.1109/EDL.1986.26475

[4] A SCHOTTKY-BARRIER DIODE WITH SELF-ALIGNED FLOATING GUARD RING [J].

CHUANG, CT ;

ARIENZO, M ;

TANG, DDL ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1482-1486

[5] SIDEWALL SPACER TECHNOLOGY FOR MOS AND BIPOLAR-DEVICES [J].

DHONG, SH ;

PETRILLO, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) :389-396

[6]

ENDO N, 1986, IEEE T ELECTRON DEV, V33, P1659, DOI 10.1109/T-ED.1986.22725

[7]

Goto H., 1982, International Electron Devices Meeting. Technical Digest, P58

[8]

ISAAC RD, 1982, VLSI SCI TECHNOLOGY, P298

[9]

KONAKA S, 1984, 16TH P C SOL STAT DE, P209

[10]

LEE YH, UNPUB RIE INDUCED DA

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