SIDEWALL SPACER TECHNOLOGY FOR MOS AND BIPOLAR-DEVICES

被引：9

作者：

DHONG, SH

PETRILLO, EJ

机构：

[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期

关键词：

BIPOLAR DEVICES - PROCESSING PARAMETERS - REACTIVE ION ETCHING - SIDEWALL SPACER TECHNOLOGY;

D O I：

10.1149/1.2108585

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：389 / 396

页数：8

共 17 条

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