SIDEWALL TAPERING IN REACTIVE ION ETCHING

[1] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, pCH6

[2] CHIU KY, 1982, HEWLETTPACKARD J AUG, P31

[3] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[4] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] HORIIKE Y, 1977, ELECTROCHEMICAL SOC, V771, P619

[7] JASTREBSKI L, 1983, SEP IEEE VLSI C MAUI

[8] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[9] LIGHT RW, 1983, J ELCHEM SO, V130, P1569

[10] OTOOLE MM, 1982, HEWLETTPACKARD J, P5

[1] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, pCH6

[2] CHIU KY, 1982, HEWLETTPACKARD J AUG, P31

[3] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[4] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] HORIIKE Y, 1977, ELECTROCHEMICAL SOC, V771, P619

[7] JASTREBSKI L, 1983, SEP IEEE VLSI C MAUI

[8] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[9] LIGHT RW, 1983, J ELCHEM SO, V130, P1569

[10] OTOOLE MM, 1982, HEWLETTPACKARD J, P5