SIDEWALL SPACER TECHNOLOGY FOR MOS AND BIPOLAR-DEVICES

被引：9

作者：

DHONG, SH

PETRILLO, EJ

机构：

[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期

关键词：

BIPOLAR DEVICES - PROCESSING PARAMETERS - REACTIVE ION ETCHING - SIDEWALL SPACER TECHNOLOGY;

D O I：

10.1149/1.2108585

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：389 / 396

页数：8

共 17 条

[11] A LASER INTERFEROMETER SYSTEM TO MONITOR DRY ETCHING OF PATTERNED SILICON [J].

STERNHEIM, M ;

VANGELDER, W ;

HARTMAN, AW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :655-658

[12] 1.25 MU-M DEEP-GROOVE-ISOLATED SELF-ALIGNED BIPOLAR CIRCUITS [J].

TANG, DD ;

SOLOMON, PM ;

NING, TH ;

ISAAC, RD ;

BURGER, RE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :925-931

[13]

TAUR Y, 1985, IEEE J SOLID-ST CIRC, V20, P123

[14] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J].

TSANG, PJ ;

OGURA, S ;

WALKER, WW ;

SHEPARD, JF ;

CRITCHLOW, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :590-596

[15]

TSANG PJ, 1982, ELECTROCHEMICAL SOC, V82, P373

[16] PROCESS AND DEVICE PERFORMANCE OF SUBMICROMETER-CHANNEL CMOS DEVICES USING DEEP-TRENCH ISOLATION AND SELF-ALIGNED TISI2 TECHNOLOGIES [J].

YAMAGUCHI, T ;

MORIMOTO, S ;

PARK, HK ;

EIDEN, GC .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :104-113

[17]

1983, SAMPLE USER GUIDE

← 1 2 →