1.25 MU-M DEEP-GROOVE-ISOLATED SELF-ALIGNED BIPOLAR CIRCUITS

被引：58

作者：

TANG, DD ^{[1
]}

SOLOMON, PM ^{[1
]}

NING, TH ^{[1
]}

ISAAC, RD ^{[1
]}

BURGER, RE ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, BIPOLAR DEVICES & CIRCUITS GRP, YORKTOWN HTS, NY 10598 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1982年 / 17卷 / 05期

关键词：

D O I：

10.1109/JSSC.1982.1051841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：925 / 931

页数：7

共 28 条

[1]

ANANTHA NG, 1979, Patent No. 4160991

[2] DESIGN AND DEVELOPMENT OF AN ULTRALOW-CAPACITANCE, HIGH-PERFORMANCE PEDESTAL TRANSITOR [J].

GHOSH, HN ;

ASHAR, KG ;

OBERAI, AS ;

DEWITT, D .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :436-&

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY [J].

GROBMAN, WD ;

LUHN, HE ;

DONOHUE, TP ;

SPETH, AJ ;

WILSON, A ;

HATZAKIS, M ;

CHANG, THP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :360-368

[4] LIMITATIONS IN MICROELECTRONICS .2. BIPOLAR TECHNOLOGY [J].

HOENEISEN, B ;

MEAD, CA .

SOLID-STATE ELECTRONICS, 1972, 15 (08) :891-+

[5]

KEMLAGE BM, 1980, OCT EL SOC M HOLL

[6]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[7] AN ADVANCED PSA TECHNOLOGY FOR HIGH-SPEED BIPOLAR LSI [J].

NAKASHIBA, H ;

ISHIDA, I ;

AOMURA, K ;

NAKAMURA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1390-1394

[8] SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI [J].

NING, TH ;

ISAAC, RD ;

SOLOMON, PM ;

TANG, DDL ;

YU, HN ;

FETH, GC ;

WIEDMANN, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1010-1013

[9] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

NING, TH ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055

[10]

NING TH, 1980 IEDM, P823

← 1 2 3 →