SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI

被引：84

作者：

NING, TH

ISAAC, RD

SOLOMON, PM

TANG, DDL

YU, HN

FETH, GC

WIEDMANN, SK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期

关键词：

D O I：

10.1109/T-ED.1981.20476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1010 / 1013

页数：4

相关论文

共 16 条

[1] ANANTHA NG, 1979, Patent No. 4160991
[2] INVESTIGATION OF THE INTRINSIC DELAY (SPEED LIMIT) IN MTL-I2L
BERGER, HH
HELWIG, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 405 - 415
[3] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA
EPHRATH, LM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428
[4] POLYCRYSTALLINE SILICON AS A DIFFUSION SOURCE AND INTERCONNECT LAYER IN I2L REALIZATIONS
MIDDELHOEK, J
KOOY, A
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (02) : 135 - 138
[5] MURAOKA H, 1973, SEMICONDUCTOR SILICO, P327
[6] AN ADVANCED PSA TECHNOLOGY FOR HIGH-SPEED BIPOLAR LSI
NAKASHIBA, H
ISHIDA, I
AOMURA, K
NAKAMURA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1390 - 1394
[7] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES
NING, TH
ISAAC, RD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2051 - 2055
[8] NING TH, 1979, Patent No. 4157269
[9] NEW POLYSILICON PROCESS FOR A BIPOLAR DEVICE - PSA TECHNOLOGY
OKADA, K
AOMURA, K
NAKAMURA, T
SHIBA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 385 - 389
[10] RISEMAN J, 1980, Patent No. 4234362