EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES

[1] Caughey D, 1967, P IEEE, V55, P2191

[2] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[3] de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3

[4] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[5] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[6] Fistul V. I., 1969, HEAVILY DOPED SEMICO

[7] GRAAFF HCD, 1978 IEDM TECH DIG, P333

[8] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[9] SOLOMON PM, 1979 IEDM TECH DIG, P510

[10] SOLOMON PM, 1979 ISSCC DIG TECH, P86

[1] Caughey D, 1967, P IEEE, V55, P2191

[2] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[3] de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3

[4] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[5] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[6] Fistul V. I., 1969, HEAVILY DOPED SEMICO

[7] GRAAFF HCD, 1978 IEDM TECH DIG, P333

[8] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[9] SOLOMON PM, 1979 IEDM TECH DIG, P510

[10] SOLOMON PM, 1979 ISSCC DIG TECH, P86