EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA

被引：25

作者：

EPHRATH, LM

机构：

来源：

关键词：

D O I：

10.1007/BF02655646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 428

页数：14

共 11 条

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[4] CHOU N, 1976, COMMUNICATION
[5] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING
HEINECKE, RAH
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147
[6] KELLER J, 1975, KODAK MICROELECTRONI
[7] KIRK RW, 1974, TECHNIQUES APPLICATI, P357
[8] KUMAR R, 1975, IEDM TECH DIGEST, P27
[9] SCHWARTZ G, 1975, COMMUNICATION
[10] SCHWARTZ GC, 1976, ETCHING, P122