REACTIVE ION ETCHING FOR VLSI

[1] AIKEN JM, 1978, J APPL PHYS, V49, P3386

[2] CHAO HH, 1981, IEEE INT SOLID STATE, P152

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[6] EPHRATH L, UNPUBLISHED

[7] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[8] EPHRATH LM, 1979, EL SOC EXT ABSTR, V79, P772

[9] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 275 - 281

[1] AIKEN JM, 1978, J APPL PHYS, V49, P3386

[2] CHAO HH, 1981, IEEE INT SOLID STATE, P152

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[6] EPHRATH L, UNPUBLISHED

[7] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[8] EPHRATH LM, 1979, EL SOC EXT ABSTR, V79, P772

[9] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 275 - 281