PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI

[1] ETCHING CHARACTERISTICS OF SILICON AND ITS COMPOUNDS BY GAS PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) : 154 - 155

[2] ABE H, 1973, DENKI KAGAKU, V41, P544

[3] Babat G.I., 1947, J I ELECT ENG 3, V94, P27, DOI [10.1049/ji-3-2.1947.0005, DOI 10.1049/JI-3-2.1947.0005]

[4] BELL AT, 1974, TECHNIQUES APPLICATI, P40

[5] THE EFFECT OF ELECTRO-NEGATIVE GASES ON THE WORK FUNCTION OF A METAL [J]. SURFACE SCIENCE, 1964, 2 : 210 - 216

[6] HEINECKE R, TO BE PUBLISHED

[7] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[8] TEMPORARY PROTECTION OF SILICON SURFACES BY IODINE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 956 - +

[9] MCTAGGART FK, 1967, PLASMA CHEM ELECTRIC, P25

[10] 1972, ELECTRONICS JUN, P32

[1] ETCHING CHARACTERISTICS OF SILICON AND ITS COMPOUNDS BY GAS PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) : 154 - 155

[2] ABE H, 1973, DENKI KAGAKU, V41, P544

[3] Babat G.I., 1947, J I ELECT ENG 3, V94, P27, DOI [10.1049/ji-3-2.1947.0005, DOI 10.1049/JI-3-2.1947.0005]

[4] BELL AT, 1974, TECHNIQUES APPLICATI, P40

[5] THE EFFECT OF ELECTRO-NEGATIVE GASES ON THE WORK FUNCTION OF A METAL [J]. SURFACE SCIENCE, 1964, 2 : 210 - 216

[6] HEINECKE R, TO BE PUBLISHED

[7] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[8] TEMPORARY PROTECTION OF SILICON SURFACES BY IODINE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 956 - +

[9] MCTAGGART FK, 1967, PLASMA CHEM ELECTRIC, P25

[10] 1972, ELECTRONICS JUN, P32