TOLPOGRAPHY MODELING IN DRY ETCHING PROCESSES

被引：4

作者：

SAKAI, Y

REYNOLDS, JL

NEUREUTHER, AR

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1149/1.2115641

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：627 / 633

页数：7

共 16 条

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[2]

BATCHELDER T, 1982, SOLID STATE TECHNOL, V25, P111

[3] EVAPORATED FILM PROFILES OVER STEPS IN SUBSTRATES [J].

BLECH, IA .

[4]

BLECH IA, 1978, J VAC SCI TECHNOL, V15

[5] REACTIVE ION ETCHING FOR VLSI [J].

EPHRATH, LM .

[6]

FLAMM DL, 1981, OCT EL SOC M DENV

[7]

Homma Y., 1981, International Electron Devices Meeting, P570

[8]

Hunter W. R., 1980, International Electron Devices Meeting. Technical Digest, P764

[9]

LEE K, 1982, 1982 S VLSI TECHN OI

NEUREUTHER, AR ;

TING, CH ;

LIU, CY .