DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR

被引：230

作者：

OGURA, S

TSANG, PJ

WALKER, WW

CRITCHLOW, DL

SHEPARD, JF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1359 / 1367

页数：9

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