SURFACE DEBYE TEMPERATURE OF SI(001) SURFACES MEASURED BY HEED

被引:3
作者
BRITZE, K [1 ]
MEYEREHMSEN, G [1 ]
机构
[1] UNIV OSNABRUCK,FACHBEREICH 4,OSNABRUCK,FED REP GER
关键词
D O I
10.1016/0039-6028(77)90390-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:358 / 361
页数:4
相关论文
共 9 条
  • [1] Bethe H, 1928, ANN PHYS-BERLIN, V87, P55
  • [2] BRITZE K, TO BE PUBLISHED
  • [3] TEMPERATURE-DEPENDENCE OF INTENSITIES FROM SILICON WITH GLANCING INCIDENCE HEED
    COLELLA, R
    BATTERMA.BW
    MENADUE, JF
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1973, A 29 (MAR1): : 151 - 153
  • [4] Debye P., 1914, ANN PHYSIK, V43, P49
  • [5] SURFACE DEBYE TEMPERATURE OF SI (001)-2 BY 2 STRUCTURE
    IGNATIEV, A
    JONA, F
    [J]. SURFACE SCIENCE, 1974, 42 (02) : 605 - 608
  • [6] KAMBE K, 1965, Z NATURFORSCH PT A, VA 20, P1730
  • [7] TEMPORARY PROTECTION OF SILICON SURFACES BY IODINE FILMS
    LIEBERMAN, R
    KLEIN, DL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 956 - +
  • [8] MOON AR, 1972, Z NATURFORSCH PT A, VA 27, P390
  • [9] NESTERENKO BA, 1971, FIZ TVERD TELA+, V12, P1621