MAGNETORESISTANCE IN MNBI FILMS

In this letter authors report on the transverse magnetoresistance of MnBi films of different compositions prepared by Chen's method in the thickness range 40 to 150 nm. The magnetoresistance is also measured for films at different substrate temperatures and annealing times. Authors reported the transverse magnetoresistance of MnBi films deposited by Chen's method. The magnetoresistance is dependent on the film thickness, substrate temperature, annealing time and the weight ratio. The study of galvanomagnetic effects in single-crystal MnBi films may shed more light on the nature of the charge carriers and these experiments are in progress, and will be reported in a future communication.