FIELD-ASSISTED BONDING BELOW 200-DEGREES-C USING METAL AND GLASS THIN-FILM INTERLAYERS

被引：15

作者：

LEE, WY ^{[1
]}

SEQUEDA, F ^{[1
]}

SALEM, J ^{[1
]}

CHAPMAN, D ^{[1
]}

机构：

[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95193

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.98146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：522 / 524

页数：3

相关论文

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