SILICON AS A MECHANICAL MATERIAL

[1] UMOS TRANSISTORS ON (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 907 - 914

[2] ANACKER W, 1976, IBM TECH DISCL B, V19, P372

[3] BACKSIDE ILLUMINATED 400 X 400 CHARGE-COUPLED DEVICE IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1225 - 1232

[4] RANDOM-WALK OF LIQUID DROPLETS MIGRATING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2316 - 2324

[5] LAMELLAR DEVICES PROCESSED BY THERMOMIGRATION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3943 - 3949

[6] STRESSES GENERATED BY THE THERMOMIGRATION OF LIQUID INCLUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5774 - 5782

[7] CHARACTERIZATION OF VAPOR-DEPOSITED PARAXYLYLENE COATINGS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 897 - 900

[8] BALIGA BJ, 1980, IEEE ELECTRON DEVICE, V1, P250

[9] INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 135 - 137

[10] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[1] UMOS TRANSISTORS ON (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 907 - 914

[2] ANACKER W, 1976, IBM TECH DISCL B, V19, P372

[3] BACKSIDE ILLUMINATED 400 X 400 CHARGE-COUPLED DEVICE IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1225 - 1232

[4] RANDOM-WALK OF LIQUID DROPLETS MIGRATING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2316 - 2324

[5] LAMELLAR DEVICES PROCESSED BY THERMOMIGRATION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3943 - 3949

[6] STRESSES GENERATED BY THE THERMOMIGRATION OF LIQUID INCLUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5774 - 5782

[7] CHARACTERIZATION OF VAPOR-DEPOSITED PARAXYLYLENE COATINGS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 897 - 900

[8] BALIGA BJ, 1980, IEEE ELECTRON DEVICE, V1, P250

[9] INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 135 - 137

[10] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185