UMOS TRANSISTORS ON (110) SILICON

被引：28

作者：

AMMAR, ES ^{[1
]}

RODGERS, TJ ^{[1
]}

机构：

[1] AMER MICROSYST INC,SANTA CLARA,CA

来源：

关键词：

D O I：

10.1109/T-ED.1980.19955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：907 / 914

页数：8

共 10 条

[1] ANISOTROPIC ETCHING OF SILICON
BEAN, KE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193
[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[3] KENDALL DL, 1975, APPL PHYS LETT, V26
[4] ANISOTROPIC ETCHING OF SILICON
LEE, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &
[5] LEE WS, 1973, SEMICONDUCTOR SILICO, P45
[6] Price J. B., 1973, SEMICONDUCTOR SILICO, P339
[7] EXPERIMENTAL AND THEORETICAL-ANALYSIS OF DOUBLE-DIFFUSED MOS-TRANSISTORS
RODGERS, TJ
ASAI, S
POCHA, MD
DUTTON, RW
MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) : 322 - 331
[8] VMOS MEMORY TECHNOLOGY
RODGERS, TJ
HILTPOLD, WR
FREDERICK, B
BARNES, JJ
JENNE, FB
TROTTER, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 515 - 524
[9] VMOS ROM
RODGERS, TJ
HILTPOLD, R
ZIMMER, JW
MARR, G
TROTTER, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) : 614 - 622
[10] RODGERS TJ, THESIS STANFORD U ST, P110