VMOS MEMORY TECHNOLOGY

被引：8

作者：

RODGERS, TJ ^{[1
]}

HILTPOLD, WR ^{[1
]}

FREDERICK, B ^{[1
]}

BARNES, JJ ^{[1
]}

JENNE, FB ^{[1
]}

TROTTER, JD ^{[1
]}

机构：

[1] AM MICROSYST INC,SANTA CLARA,CA 95051

来源：

关键词：

D O I：

10.1109/JSSC.1977.1050945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：515 / 524

页数：10

共 16 条

[1] AHLQUIST CN, 1976, ISSCC DIGEST TECH PA, P128
[2] Barnes J., 1976, International Electron Devices Meeting. (Technical digest), P173
[3] BARNES JA, TO BE PUBLISHED
[4] Bhatti I. S., 1976, International Electron Devices Meeting. (Technical digest), P565
[5] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES
DECLERCQ, MJ
PLUMMER, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) : 1 - 4
[6] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[7] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
GAENSSLEN, FH
RIDEOUT, VL
WALKER, EJ
WALKER, JJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229
[8] Jenne F. B., 1977, U.S. Patent, Patent No. [4,003,036, 4003036]
[9] JENNE FB, 1976, IEDM LATE NEWS PAPER
[10] KOOI E, 1973, SEMICONDUCTOR SILICO, P860