VMOS ROM

被引：7

作者：

RODGERS, TJ ^{[1
]}

HILTPOLD, R ^{[1
]}

ZIMMER, JW ^{[1
]}

MARR, G ^{[1
]}

TROTTER, JD ^{[1
]}

机构：

[1] AMER MICROSYST INC, DIV RES & DEV, SANTA CLARA, CA 95051 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 05期

关键词：

D O I：

10.1109/JSSC.1976.1050789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：614 / 622

页数：9

共 19 条

[1] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J].

BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :401-&

[2]

CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P40

[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[4] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[5] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[6] V GROOVE MOS-TRANSISTOR TECHNOLOGY [J].

HOLMES, FE ;

SALAMA, CAT .

ELECTRONICS LETTERS, 1973, 9 (19) :457-458

[7] ANISOTROPIC ETCHING OF SILICON [J].

LEE, DB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4569-&

[8]

LEE WS, 1973, SEMICONDUCTOR SILICO, P45

[9]

LUECKE G, 1973, SEMICONDUCTOR MEMORY, P119

[10]

MASUDA H, 1973, J JAPAN SOC APPL P S, V42, P167

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