FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON

被引:243
作者
BASSOUS, E
机构
关键词
D O I
10.1109/T-ED.1978.19249
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1178 / 1185
页数:8
相关论文
共 45 条
[1]  
ANACKER W, 1976, IBM TECH DISCL B, V19, P372
[2]   INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J].
BASSOUS, E ;
TAUB, HH ;
KUHN, L .
APPLIED PHYSICS LETTERS, 1977, 31 (02) :135-137
[3]  
BASSOUS E, 1976, SOLID STATE TECHNOL, V19, P55
[4]  
BASSOUS E, 1977, Patent No. 4047184
[5]  
BASSOUS E, 1977, OCT EL SOC FALL M AT, V77, P954
[6]  
BASSOUS E, 1975, Patent No. 3921916
[7]  
BASSOUS E, 1977, Patent No. 4007464
[8]   DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J].
BEAN, KE ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :C5-C12
[9]   APPLICATION OF SILICON CRYSTAL ORIENTATION AND ANISOTROPIC EFFECTS TO CONTROL OF CHARGE SPREADING IN DEVICES [J].
BEAN, KE ;
LAWSON, JR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (03) :111-117