FORMATION OF BURIED COSI2 LAYERS BY ION-IMPLANTATION, STUDIED BY MOSSBAUER-SPECTROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY

被引：11

作者：

VANTOMME, A ^{[1
]}

WU, MF ^{[1
]}

DEZSI, I ^{[1
]}

LANGOUCHE, G ^{[1
]}

MAEX, K ^{[1
]}

VANHELLEMONT, J ^{[1
]}

机构：

[1] INTERUNIV MICRO ELECTR CTR VZW,B-3030 LOUVAIN,BELGIUM

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90234-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 161

页数：5

共 18 条

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