EPITAXIAL SILICIDES

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[4] BEAN JC, UNPUB

[5] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[6] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[7] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[8] CHIU KCR, 1980, THIN FILM INTERFACES, P171

[9] CHIU KCR, 1980, UNPUB

[10] CRIDER CA, 1980, THIN FILM INTERFACES, P135

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[4] BEAN JC, UNPUB

[5] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[6] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[7] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[8] CHIU KCR, 1980, THIN FILM INTERFACES, P171

[9] CHIU KCR, 1980, UNPUB

[10] CRIDER CA, 1980, THIN FILM INTERFACES, P135