EPITAXIAL SILICIDES

[11] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[12] GIBSON JM, 1981, I PHYS C SER, V60, P415

[13] HUTCHINS GA, 1973, THIN SOLID FILMS, V18, P313

[14] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[15] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5302 - 5306

[16] THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 843 - 848

[17] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[18] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420

[19] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[20] ISHIWARA H, 1980, THIN FILM INTERFACES

[11] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[12] GIBSON JM, 1981, I PHYS C SER, V60, P415

[13] HUTCHINS GA, 1973, THIN SOLID FILMS, V18, P313

[14] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[15] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5302 - 5306

[16] THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 843 - 848

[17] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[18] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420

[19] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[20] ISHIWARA H, 1980, THIN FILM INTERFACES